Product development, specification, datasheet, 2n2219a, 2n2222a. These are the part details and datasheets for 2n2222a and contains information such as trending graphs, pricing, part images, similar parts, technical information, supplier stock, and manufacturer information. These are the part details and datasheets for 2n2222a and contains information such as trending graphs, pricing, part images, similar parts, technical information, supplier. They are designed for high speedswitching application at collector current up to500ma, and feature useful current gain over a datasheet search, datasheets, datasheet search site for electronic components and. Emitter saturation voltage vcesat ic 150ma, ib 15ma.
It is designed for high speed switching application at collector current up to 500ma. Jameco part number 787536 2004 fairchild semiconductor corporation rev. A listing of scillcs productpatent coverage may be accessed at. Irfp250mpbf hexfet power mosfet 030110 parameter max. The content and s of the attached material are the property of its owner. Tstg operating and storage junction temperature range 75v 40v 6v 800ma. Datasheet ds6561 rev 21 april 2020 for further information contact your local stmicroelectronics sales office. Thermal characteristicssymbol datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other semiconductors.
Collector current dc peak collector current peak base current operating junction temperature storage temperature rating total power dissipation ta25 tc25 thermal resistance, junction to case thermal resistance, junction to ambient. Semicoa chip type 2c2222a geometry 0400 polarity npn,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Bah 2n2221a2n2222a small signal general purpose transistors npn. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions.
They are designed for high speed switching application at collector current up to 500ma, and feature useful current gain over a wide range of collector current. Ta 25 c unless otherwise specified parameter symbol test conditions min typ max unit on characteristics note 1 dc current gain hfe vce 10v ic 0. Free packages are available maximum ratings ta 25c unless otherwise noted characteristic symbol value unit collector. Philips npn switching transistors,alldatasheet, datasheet, datasheet search site for. Description symbol 2n2222a unit collector emitter voltage vceo 40 v collector base voltage vcbo 75 v emitter base voltage vebo 6. Stmicroelectronics high speed switches,alldatasheet, datasheet, datasheet search site for. Designed for low current, low power and medium voltage, it can operate at moderate high speed. Pn2222a mmbt2222a pzt2222a npn general purpose amplifier. The nte123a npn and nte159m pnp are widely used industry standard complementary transistors in a to18 type case designed for applications such as mediumspeed switching and amplifiers from audio to vhf frequencies. Ja thermal resistance, junction to ambient 200 357 125 cw pn2222a mmbt2222a. Thermal data symbol parameter lcc3 and ub value unit rthjspis thermal resistance junctionsolder pad infinite sink max for jans 90 cw rthja thermal resistance junctionambient. Units pn2222a mmbt2222a pzt2222a pd total device dissipation derate above 25c 625 5. Recent listings manufacturer directory get instant. Storage temperature, tstg 65 150 c 1 stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device.
Aah 200711 mmbt2222a smd general purpose transistor npn. They are designed for high speedswitching application at collector current up to500ma, and feature useful current gain over a datasheet search, datasheets, datasheet search site for electronic. Free devices maximum ratings ta 25c unless otherwise noted characteristic symbol value unit collector. Ja thermal resistance, junction to ambient 200 357 cw. The 2n2219a and 2n2222a are silicon planar epitaxial npn transistors in jedec to39 for 2n2219a and in jedec to18 for 2n2222a. Unit pn29073 mmbt29074 pd total device dissipation 625 350 mw derate above 25c5. Small signal general purpose transistors npn 2n2221a2n2222a. The datasheet is printed for reference information only. P2n2222a amplifier transistors npn silicon features these are pb. Operating junction temperature 175 oc to18 to39 17 obsolete products obsolete products. Operating and storage junction temperature range tj, tstg. P2n2222a amplifier transistors npn silicon features pb. Please consult the most recently issued document before initiating or completing a design.
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